InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

Kai Lin Lee; Kuan Wei Lee; Men Hsi Tsai; Po Wen Sze; Mau Phon Houng; Yeong Her Wang

doi:10.1109/EDSSC.2005.1635348

InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

Kai Lin Lee, Kuan Wei Lee, Men Hsi Tsai, Po Wen Sze, Mau Phon Houng, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The In_0.52Al_0.48As/In_0.53Ga _0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	613-616
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635348
Publication status	Published - 2005 Jan 1
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	05-12-19 → 05-12-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635348

Cite this

Lee, K. L., Lee, K. W., Tsai, M. H., Sze, P. W., Houng, M. P., & Wang, Y. H. (2005). InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 613-616). Article 1635348 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635348

Lee, Kai Lin ; Lee, Kuan Wei ; Tsai, Men Hsi et al. / InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 613-616 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

@inproceedings{a1e3c4e0c17a45369e1a1ac6a243baff,

title = "InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric",

abstract = "The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.",

author = "Lee, {Kai Lin} and Lee, {Kuan Wei} and Tsai, {Men Hsi} and Sze, {Po Wen} and Houng, {Mau Phon} and Wang, {Yeong Her}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/EDSSC.2005.1635348",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "613--616",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

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Lee, KL, Lee, KW, Tsai, MH, Sze, PW, Houng, MP & Wang, YH 2005, InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635348, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 613-616, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635348

InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. / Lee, Kai Lin; Lee, Kuan Wei; Tsai, Men Hsi et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 613-616 1635348 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

AU - Lee, Kai Lin

AU - Lee, Kuan Wei

AU - Tsai, Men Hsi

AU - Sze, Po Wen

AU - Houng, Mau Phon

AU - Wang, Yeong Her

PY - 2005/1/1

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N2 - The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

AB - The In0.52Al0.48As/In0.53Ga 0.47As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.

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DO - 10.1109/EDSSC.2005.1635348

M3 - Conference contribution

SN - 0780393392

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T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 613

EP - 616

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Lee KL, Lee KW, Tsai MH, Sze PW, Houng MP, Wang YH. InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 613-616. 1635348. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635348

InAlAs/InGaAs metamorphic high electron mobility transistor with a liquid phase oxidized InAlAs as gate dielectric

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