InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Wei Chou Hsu; Ching Sung Lee; Chiu Sheng Ho; Ying Nan Lai; Jun Chin Huang; Bo Yi Chou; An Yung Kao; Hsuan Hsien Yeh; Chuan Luan Wu

doi:10.1149/1.3407624

InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Wei Chou Hsu, Ching Sung Lee, Chiu Sheng Ho, Ying Nan Lai, Jun Chin Huang, Bo Yi Chou, An Yung Kao, Hsuan Hsien Yeh, Chuan Luan Wu

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9 Citations (Scopus)

Abstract

This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at V_gd =-5 V, improved output conductance (g_d) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

Original language	English
Pages (from-to)	H234-H236
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1149/1.3407624
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3407624

Cite this

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title = "InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment",

abstract = "This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.",

author = "Hsu, {Wei Chou} and Lee, {Ching Sung} and Ho, {Chiu Sheng} and Lai, {Ying Nan} and Huang, {Jun Chin} and Chou, {Bo Yi} and Kao, {An Yung} and Yeh, {Hsuan Hsien} and Wu, {Chuan Luan}",

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pages = "H234--H236",

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T1 - InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Ho, Chiu Sheng

AU - Lai, Ying Nan

AU - Huang, Jun Chin

AU - Chou, Bo Yi

AU - Kao, An Yung

AU - Yeh, Hsuan Hsien

AU - Wu, Chuan Luan

PY - 2010

Y1 - 2010

N2 - This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

AB - This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Abstract

All Science Journal Classification (ASJC) codes

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