InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Wei-Chou Hsu, Ching Sung Lee, Chiu Sheng Ho, Ying Nan Lai, Jun Chin Huang, Bo Yi Chou, An Yung Kao, Hsuan Hsien Yeh, Chuan Luan Wu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number7
DOIs
Publication statusPublished - 2010 Sep 7

Fingerprint

Ozone
ozone
Oxidation
oxidation
Water
High electron mobility transistors
Oxides
water
Metals
output
Electric potential
power efficiency
flatness
high electron mobility transistors
metal oxide semiconductors
leakage
oxides
electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Hsu, Wei-Chou ; Lee, Ching Sung ; Ho, Chiu Sheng ; Lai, Ying Nan ; Huang, Jun Chin ; Chou, Bo Yi ; Kao, An Yung ; Yeh, Hsuan Hsien ; Wu, Chuan Luan. / InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 7.
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abstract = "This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3){\%} at 300 K, with gate dimensions of 1×200 μm2.",
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Hsu, W-C, Lee, CS, Ho, CS, Lai, YN, Huang, JC, Chou, BY, Kao, AY, Yeh, HH & Wu, CL 2010, 'InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment', Electrochemical and Solid-State Letters, vol. 13, no. 7. https://doi.org/10.1149/1.3407624

InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment. / Hsu, Wei-Chou; Lee, Ching Sung; Ho, Chiu Sheng; Lai, Ying Nan; Huang, Jun Chin; Chou, Bo Yi; Kao, An Yung; Yeh, Hsuan Hsien; Wu, Chuan Luan.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 7, 07.09.2010.

Research output: Contribution to journalArticle

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T1 - InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

AU - Hsu, Wei-Chou

AU - Lee, Ching Sung

AU - Ho, Chiu Sheng

AU - Lai, Ying Nan

AU - Huang, Jun Chin

AU - Chou, Bo Yi

AU - Kao, An Yung

AU - Yeh, Hsuan Hsien

AU - Wu, Chuan Luan

PY - 2010/9/7

Y1 - 2010/9/7

N2 - This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

AB - This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

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