This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering