InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Wei Chou Hsu, Ching Sung Lee, Chiu Sheng Ho, Ying Nan Lai, Jun Chin Huang, Bo Yi Chou, An Yung Kao, Hsuan Hsien Yeh, Chuan Luan Wu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

Original languageEnglish
Pages (from-to)H234-H236
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment'. Together they form a unique fingerprint.

Cite this