InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment

Wei Chou Hsu, Ching Sung Lee, Chiu Sheng Ho, Ying Nan Lai, Jun Chin Huang, Bo Yi Chou, An Yung Kao, Hsuan Hsien Yeh, Chuan Luan Wu

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Abstract

This article reports an InAlAs/InGaAs metal oxide semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) by using ozone water oxidation treatment to form an 8.5 nm thick gate oxide with a superior surface flatness. The proposed MHEMT with (without) ozone treatment has demonstrated a lower gate leakage density of 2μA/mm (0.48 mA/mm) at Vgd =-5 V, improved output conductance (gd) of 8.5 (33.1) mS/mm, gate-voltage swing of 0.9 (0.45) V, enhanced output power of 18.34 (13.43) dBm, and power-added efficiency of 46.8 (26.3)% at 300 K, with gate dimensions of 1×200 μm2.

Original languageEnglish
Pages (from-to)H234-H236
JournalElectrochemical and Solid-State Letters
Volume13
Issue number7
DOIs
Publication statusPublished - 2010 Sep 7

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Hsu, W. C., Lee, C. S., Ho, C. S., Lai, Y. N., Huang, J. C., Chou, B. Y., Kao, A. Y., Yeh, H. H., & Wu, C. L. (2010). InAlAs/InGaAs MOS-MHEMTs by using ozone water oxidation treatment. Electrochemical and Solid-State Letters, 13(7), H234-H236. https://doi.org/10.1149/1.3407624