InAs hole inversion and bandgap interface state density of 2 × 1011 cm-2 eV-1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L. E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz

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32 Citations (Scopus)


High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density Dit 2.2 × 1011 cm-2 eV -1 has been obtained throughout the InAs bandgap.

Original languageEnglish
Article number143510
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2013 Sep 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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