InAs hole inversion and bandgap interface state density of 2 × 1011 cm-2 eV-1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L. E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz

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Physics & Astronomy