Using liquid phase oxidation technique to prepare native oxides on InAs is demonstrated. In addition to scanning electron microscope, atomic force microscopy and X-ray photoelectron spectroscopy were used to analyze the surfaces and chemical compositions of the oxides. The chemical composition of the InAs native oxide is a mixture of indium oxide (In2 O 3) and arsenic oxide (AS2O3). The annealing effects on the oxide properties were also investigated.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry