InAs native oxides prepared by liquid phase oxidation method

Hsien Cheng Lin, Kuan Wei Lee, Chia Hong Hsieh, Yu Chun Cheng, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Using liquid phase oxidation technique to prepare native oxides on InAs is demonstrated. In addition to scanning electron microscope, atomic force microscopy and X-ray photoelectron spectroscopy were used to analyze the surfaces and chemical compositions of the oxides. The chemical composition of the InAs native oxide is a mixture of indium oxide (In2 O 3) and arsenic oxide (AS2O3). The annealing effects on the oxide properties were also investigated.

Original languageEnglish
Pages (from-to)G230-G233
JournalJournal of the Electrochemical Society
Volume157
Issue number11
DOIs
Publication statusPublished - 2010 Oct 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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