Abstract
Using liquid phase oxidation technique to prepare native oxides on InAs is demonstrated. In addition to scanning electron microscope, atomic force microscopy and X-ray photoelectron spectroscopy were used to analyze the surfaces and chemical compositions of the oxides. The chemical composition of the InAs native oxide is a mixture of indium oxide (In2 O 3) and arsenic oxide (AS2O3). The annealing effects on the oxide properties were also investigated.
Original language | English |
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Pages (from-to) | G230-G233 |
Journal | Journal of the Electrochemical Society |
Volume | 157 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 Oct 13 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry