InAs quantum dot growth by APMOCVD

T. S. Yeoh, R. B. Swint, J. J. Coleman, C. P. Liu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this study, 5 nm coherent islands approx. 3.5×1010 cm-2 were successfully grown using APMOCVD at 450°C. Incoherent islands >10 nm occurred possibly due to the low activation energy of dislocated cluster formation at 450°C.

Original languageEnglish
Pages (from-to)31-32
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots - San Diego, CA, USA
Duration: 1999 Jul 261999 Jul 27

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Yeoh, T. S., Swint, R. B., Coleman, J. J., & Liu, C. P. (1999). InAs quantum dot growth by APMOCVD. LEOS Summer Topical Meeting, 31-32.