InAs quantum dot growth by APMOCVD

T. S. Yeoh, R. B. Swint, J. J. Coleman, Chuan-Pu Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, 5 nm coherent islands approx. 3.5×1010 cm-2 were successfully grown using APMOCVD at 450°C. Incoherent islands >10 nm occurred possibly due to the low activation energy of dislocated cluster formation at 450°C.

Original languageEnglish
Pages (from-to)31-32
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 1999

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Semiconductor quantum dots
Activation energy
quantum dots
activation energy

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Yeoh, T. S., Swint, R. B., Coleman, J. J., & Liu, C-P. (1999). InAs quantum dot growth by APMOCVD. LEOS Summer Topical Meeting, 31-32.
Yeoh, T. S. ; Swint, R. B. ; Coleman, J. J. ; Liu, Chuan-Pu. / InAs quantum dot growth by APMOCVD. In: LEOS Summer Topical Meeting. 1999 ; pp. 31-32.
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Yeoh, TS, Swint, RB, Coleman, JJ & Liu, C-P 1999, 'InAs quantum dot growth by APMOCVD', LEOS Summer Topical Meeting, pp. 31-32.

InAs quantum dot growth by APMOCVD. / Yeoh, T. S.; Swint, R. B.; Coleman, J. J.; Liu, Chuan-Pu.

In: LEOS Summer Topical Meeting, 1999, p. 31-32.

Research output: Contribution to journalArticle

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