Independently controlled etching and growth of graphene quantum dots and their SERS applications

Ying Ren Chen; Cheng Lung Chung; Gideon Chen; Yonhua Tzeng

doi:10.1109/NANO.2016.7751493

Independently controlled etching and growth of graphene quantum dots and their SERS applications

Ying Ren Chen, Cheng Lung Chung, Gideon Chen, Yonhua Tzeng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	759-762
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751493
Publication status	Published - 2016 Nov 21
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 2016 Aug 22 → 2016 Aug 25

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	16-08-22 → 16-08-25

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751493

Cite this

Chen, Y. R., Chung, C. L., Chen, G., & Tzeng, Y. (2016). Independently controlled etching and growth of graphene quantum dots and their SERS applications. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 759-762). Article 7751493 (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751493

@inproceedings{fa70dc9221a941b7b79d271e3fd24a10,

title = "Independently controlled etching and growth of graphene quantum dots and their SERS applications",

abstract = "We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.",

author = "Chen, {Ying Ren} and Chung, {Cheng Lung} and Gideon Chen and Yonhua Tzeng",

note = "Funding Information: Research supported by the Ministry of Science and Technology, Taiwan under the grants #103-2221-E-006-125-MY3, #104-2218-E-006-003-, #105-2911-I-006-513-, and #105-2918-I-006-007- and the Ministry of Education under a special grant for advancing towards a world class university. Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751493",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "759--762",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

address = "United States",

}

Chen, YR, Chung, CL, Chen, G & Tzeng, Y 2016, Independently controlled etching and growth of graphene quantum dots and their SERS applications. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751493, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 759-762, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16-08-22. https://doi.org/10.1109/NANO.2016.7751493

Independently controlled etching and growth of graphene quantum dots and their SERS applications. / Chen, Ying Ren; Chung, Cheng Lung; Chen, Gideon et al.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 759-762 7751493 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Independently controlled etching and growth of graphene quantum dots and their SERS applications

AU - Chen, Ying Ren

AU - Chung, Cheng Lung

AU - Chen, Gideon

AU - Tzeng, Yonhua

N1 - Funding Information: Research supported by the Ministry of Science and Technology, Taiwan under the grants #103-2221-E-006-125-MY3, #104-2218-E-006-003-, #105-2911-I-006-513-, and #105-2918-I-006-007- and the Ministry of Education under a special grant for advancing towards a world class university. Publisher Copyright: © 2016 IEEE.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.

AB - We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30∼50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.

UR - http://www.scopus.com/inward/record.url?scp=85006957571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006957571&partnerID=8YFLogxK

U2 - 10.1109/NANO.2016.7751493

DO - 10.1109/NANO.2016.7751493

M3 - Conference contribution

AN - SCOPUS:85006957571

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 759

EP - 762

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

Y2 - 22 August 2016 through 25 August 2016

ER -

Chen YR, Chung CL, Chen G, Tzeng Y. Independently controlled etching and growth of graphene quantum dots and their SERS applications. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 759-762. 7751493. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751493

Independently controlled etching and growth of graphene quantum dots and their SERS applications

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this