Indium Aluminum Zinc Oxide Phototransistor with HfO2 Dielectric Layer through Atomic Layer Deposition

T. H. Cheng, S. P. Chang, Y. C. Cheng, S. J. Chang

Research output: Contribution to journalArticle

Abstract

Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200°C has a better Ion/Ioff of 71\times 10^{{8}}$ and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 °C gives a good photoresponse of 0.2 A/W and a high rejection ratio of .86\times 10^{{5}}$. An IAZO TFT with a HfO2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology.

Original languageEnglish
Article number8884100
Pages (from-to)1838-1842
Number of pages5
JournalIEEE Sensors Journal
Volume20
Issue number4
DOIs
Publication statusPublished - 2020 Feb 15

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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