TY - JOUR
T1 - Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing
AU - Cheng, Tien Hung
AU - Chang, Sheng Po
AU - Cheng, Yen Chi
AU - Chang, Shoou Jinn
N1 - Funding Information:
This work was supported in part by the Ministry of Science and Technology under Contract MOST 107-2221-E-006-146 and Contract 107-2221-E-006-189-MY3, in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education.
Funding Information:
Manuscript received December 30, 2018; revised March 13, 2019; accepted April 27, 2019. Date of publication May 6, 2019; date of current version June 12, 2019. This work was supported in part by the Ministry of Science and Technology under Contract MOST 107-2221-E-006-146 and Contract 107-2221-E-006-189-MY3, in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. (Corresponding author: Sheng-Po Chang.) The authors are with the Advanced Optoelectronic Technology Center, Department of Electrical Engineering, Institute of Microelectronics, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: [email protected]; [email protected]; [email protected]; [email protected]. edu.tw).
Publisher Copyright:
© 1989-2012 IEEE.
PY - 2019/7/1
Y1 - 2019/7/1
N2 - Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.
AB - Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.
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U2 - 10.1109/LPT.2019.2914726
DO - 10.1109/LPT.2019.2914726
M3 - Article
AN - SCOPUS:85067364252
SN - 1041-1135
VL - 31
SP - 1005
EP - 1008
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 13
M1 - 8707004
ER -