Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing

Tien Hung Cheng; Sheng Po Chang; Yen Chi Cheng; Shoou Jinn Chang

doi:10.1109/LPT.2019.2914726

Indium Aluminum Zinc Oxide Thin Film Transistor With Al₂O₃ Dielectric for UV Sensing

Tien Hung Cheng, Sheng Po Chang, Yen Chi Cheng, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al₂O₃ deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al₂O₃ dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO₂ dielectric layer (-0.352 V). These results revealed that the device with Al₂O₃ dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO₂ dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al₂O₃ dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 10³); this device has high potential for use in ultraviolet sensing applications.

Original language	English
Article number	8707004
Pages (from-to)	1005-1008
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	31
Issue number	13
DOIs	https://doi.org/10.1109/LPT.2019.2914726
Publication status	Published - 2019 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{2a56fc95c20d4266af2e538bf059c910,

title = "Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing",

abstract = "Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.",

author = "Cheng, {Tien Hung} and Chang, {Sheng Po} and Cheng, {Yen Chi} and Chang, {Shoou Jinn}",

note = "Funding Information: Manuscript received December 30, 2018; revised March 13, 2019; accepted April 27, 2019. Date of publication May 6, 2019; date of current version June 12, 2019. This work was supported in part by the Ministry of Science and Technology under Contract MOST 107-2221-E-006-146 and Contract 107-2221-E-006-189-MY3, in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. (Corresponding author: Sheng-Po Chang.) The authors are with the Advanced Optoelectronic Technology Center, Department of Electrical Engineering, Institute of Microelectronics, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: eehenry9991@gmail.com; alex2010168@hotmail.com; changsp@mail.ncku.edu.tw; changsj@mail.ncku. edu.tw).",

year = "2019",

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doi = "10.1109/LPT.2019.2914726",

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T1 - Indium Aluminum Zinc Oxide Thin Film Transistor With Al2O3 Dielectric for UV Sensing

AU - Cheng, Tien Hung

AU - Chang, Sheng Po

AU - Cheng, Yen Chi

AU - Chang, Shoou Jinn

N1 - Funding Information: Manuscript received December 30, 2018; revised March 13, 2019; accepted April 27, 2019. Date of publication May 6, 2019; date of current version June 12, 2019. This work was supported in part by the Ministry of Science and Technology under Contract MOST 107-2221-E-006-146 and Contract 107-2221-E-006-189-MY3, in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. (Corresponding author: Sheng-Po Chang.) The authors are with the Advanced Optoelectronic Technology Center, Department of Electrical Engineering, Institute of Microelectronics, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: eehenry9991@gmail.com; alex2010168@hotmail.com; changsp@mail.ncku.edu.tw; changsj@mail.ncku. edu.tw).

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.

AB - Two bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) were fabricated with different dielectric layers. The TFT with Al2O3 deposited through atomic layer deposition (ALD) had higher field mobility of 0.48 cm 2 V, Ion/Ioff of 9.7 × 107, and lower subthreshold swing of 0.3 V/dec. The hysteresis of the two devices showed that the device with Al2O3 dielectric layer had a lower threshold voltage shift (-0.065 V) compared with that of the device with the SiO2 dielectric layer (-0.352 V). These results revealed that the device with Al2O3 dielectric layer had fewer interface traps between the active layer and dielectric layer than the device with the SiO2 dielectric layer deposited through plasma-enhanced chemical vapor deposition. Because of the improvement of interface traps, the device with Al2O3 dielectric layer had high responsivity (6.18 A/W) and rejection ratio (1.74 × 103); this device has high potential for use in ultraviolet sensing applications.

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