We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering