Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Cheng Liang Hsu, Shoou Jinn Chang, Yan Ru Lin, Jyh Ming Wu, Tzer Shen Lin, Song Yeu Tsai, I. Cherng Chen

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24 Citations (Scopus)

Abstract

We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

Original languageEnglish
Pages (from-to)516-519
Number of pages4
JournalNanotechnology
Volume17
Issue number2
DOIs
Publication statusPublished - 2006 Jan 28

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Hsu, C. L., Chang, S. J., Lin, Y. R., Wu, J. M., Lin, T. S., Tsai, S. Y., & Chen, I. C. (2006). Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate. Nanotechnology, 17(2), 516-519. https://doi.org/10.1088/0957-4484/17/2/029