Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Cheng Liang Hsu; Shoou Jinn Chang; Yan Ru Lin; Jyh Ming Wu; Tzer Shen Lin; Song Yeu Tsai; I. Cherng Chen

doi:10.1088/0957-4484/17/2/029

Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Cheng Liang Hsu, Shoou Jinn Chang, Yan Ru Lin, Jyh Ming Wu, Tzer Shen Lin, Song Yeu Tsai, I. Cherng Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

Original language	English
Pages (from-to)	516-519
Number of pages	4
Journal	Nanotechnology
Volume	17
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/17/2/029
Publication status	Published - 2006 Jan 28

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/17/2/029

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title = "Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate",

abstract = "We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.",

author = "Hsu, {Cheng Liang} and Chang, {Shoou Jinn} and Lin, {Yan Ru} and Wu, {Jyh Ming} and Lin, {Tzer Shen} and Tsai, {Song Yeu} and Chen, {I. Cherng}",

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T1 - Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

AU - Lin, Yan Ru

AU - Wu, Jyh Ming

AU - Lin, Tzer Shen

AU - Tsai, Song Yeu

AU - Chen, I. Cherng

PY - 2006/1/28

Y1 - 2006/1/28

N2 - We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

AB - We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 °C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 νm and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occurred at the bottom of the ZnO nanowires.

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EP - 519

JO - Nanotechnology

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Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

Abstract

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