Indium doped ZnO thin films prepared by sol-gel technique for efficient inverted type of polymer solar cells

Jian Fu Tang; Lung Chien Chen; Zong Liang Tseng; Sheng Yuan Chu

doi:10.1166/jno.2017.2077

Indium doped ZnO thin films prepared by sol-gel technique for efficient inverted type of polymer solar cells

Jian Fu Tang, Lung Chien Chen, Zong Liang Tseng, Sheng Yuan Chu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrate indium doped ZnO (IZO) thin films used as electron transport layers (ETLs) for P3HT:PCBM bulk heterojunction (BHJ) polymer solar cells. The IZO thin films were deposited by a low-temperature sol-gel method and their electric and optical properties regarding different indium contents were discussed for improving electron transport. The results show significantly higher fill factor for the devices based on the IZO thin films compared to the pure ZnO thin films, leading to remarkable improvement for power conversion efficiency. For the best cells, the conversion efficiency at AM1.5G illumination was 4.18%. The flexible cells using IZO ETLs were also fabricated for both highly stable and efficient flexible photovoltaic applications.

Original language	English
Pages (from-to)	849-852
Number of pages	4
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	12
Issue number	8
DOIs	https://doi.org/10.1166/jno.2017.2077
Publication status	Published - 2017 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1166/jno.2017.2077

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@article{bfe9977e9c0146cda8873f30d0382a5a,

title = "Indium doped ZnO thin films prepared by sol-gel technique for efficient inverted type of polymer solar cells",

abstract = "We demonstrate indium doped ZnO (IZO) thin films used as electron transport layers (ETLs) for P3HT:PCBM bulk heterojunction (BHJ) polymer solar cells. The IZO thin films were deposited by a low-temperature sol-gel method and their electric and optical properties regarding different indium contents were discussed for improving electron transport. The results show significantly higher fill factor for the devices based on the IZO thin films compared to the pure ZnO thin films, leading to remarkable improvement for power conversion efficiency. For the best cells, the conversion efficiency at AM1.5G illumination was 4.18%. The flexible cells using IZO ETLs were also fabricated for both highly stable and efficient flexible photovoltaic applications.",

author = "Tang, {Jian Fu} and Chen, {Lung Chien} and Tseng, {Zong Liang} and Chu, {Sheng Yuan}",

note = "Funding Information: Acknowledgments: Financial support from the Ministry of Science and Technology (MOST), Taiwan, ROC (grand number: NSC103-2221-E-027-029-MY2, 102-2221-E-006-186-MY3) was great acknowledged.",

year = "2017",

month = aug,

doi = "10.1166/jno.2017.2077",

language = "English",

volume = "12",

pages = "849--852",

journal = "Journal of Nanoelectronics and Optoelectronics",

issn = "1555-130X",

publisher = "American Scientific Publishers",

number = "8",

}

TY - JOUR

T1 - Indium doped ZnO thin films prepared by sol-gel technique for efficient inverted type of polymer solar cells

AU - Tang, Jian Fu

AU - Chen, Lung Chien

AU - Tseng, Zong Liang

AU - Chu, Sheng Yuan

N1 - Funding Information: Acknowledgments: Financial support from the Ministry of Science and Technology (MOST), Taiwan, ROC (grand number: NSC103-2221-E-027-029-MY2, 102-2221-E-006-186-MY3) was great acknowledged.

PY - 2017/8

Y1 - 2017/8

N2 - We demonstrate indium doped ZnO (IZO) thin films used as electron transport layers (ETLs) for P3HT:PCBM bulk heterojunction (BHJ) polymer solar cells. The IZO thin films were deposited by a low-temperature sol-gel method and their electric and optical properties regarding different indium contents were discussed for improving electron transport. The results show significantly higher fill factor for the devices based on the IZO thin films compared to the pure ZnO thin films, leading to remarkable improvement for power conversion efficiency. For the best cells, the conversion efficiency at AM1.5G illumination was 4.18%. The flexible cells using IZO ETLs were also fabricated for both highly stable and efficient flexible photovoltaic applications.

AB - We demonstrate indium doped ZnO (IZO) thin films used as electron transport layers (ETLs) for P3HT:PCBM bulk heterojunction (BHJ) polymer solar cells. The IZO thin films were deposited by a low-temperature sol-gel method and their electric and optical properties regarding different indium contents were discussed for improving electron transport. The results show significantly higher fill factor for the devices based on the IZO thin films compared to the pure ZnO thin films, leading to remarkable improvement for power conversion efficiency. For the best cells, the conversion efficiency at AM1.5G illumination was 4.18%. The flexible cells using IZO ETLs were also fabricated for both highly stable and efficient flexible photovoltaic applications.

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SP - 849

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 8

ER -

Indium doped ZnO thin films prepared by sol-gel technique for efficient inverted type of polymer solar cells

Abstract

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