Indium gallium oxide thin film transistor for two-stage UV sensor application

Wei Lun Huang, Ming Hung Hsu, Sheng-Po Chang, Shoou-Jinn Chang, Yu Zung Chiou

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, IGO is a potential candidate for UV-detection applications. Measured in the dark, the IGO TFT exhibits a threshold voltage of 0.9 V, mobility of 2.66 cm2/Vs, on-off ratio of 1.21×106, subthreshold swing of 0.41 V/dec. The TFT was then employed to detect UV light and the sensing properties are investigated. The IGO phototransistor has a high responsivity of 5.012 A/W and a rejection ratio of 1.65×105. The above results reveal that IGO phototransistor is a brilliant multi-functional device, which can serve as either a switch component or a UV sensor.

Original languageEnglish
Pages (from-to)Q3140-Q3143
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - 2019 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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