Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide

Gow Huei Yang, Jun Dar Hwang, Chih Hsueh Lan, Chien Mao Chan, Hone Zem Chen, Shoou Jinn Chang

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11 Citations (Scopus)

Abstract

A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

Original languageEnglish
Pages (from-to)5119-5121
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number8 A
DOIs
Publication statusPublished - 2007 Aug 6

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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