TY - JOUR
T1 - Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide
AU - Yang, Gow Huei
AU - Hwang, Jun Dar
AU - Lan, Chih Hsueh
AU - Chan, Chien Mao
AU - Chen, Hone Zem
AU - Chang, Shoou Jinn
PY - 2007/8/6
Y1 - 2007/8/6
N2 - A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.
AB - A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.
UR - http://www.scopus.com/inward/record.url?scp=34547854361&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547854361&partnerID=8YFLogxK
U2 - 10.1143/JJAP.46.5119
DO - 10.1143/JJAP.46.5119
M3 - Article
AN - SCOPUS:34547854361
VL - 46
SP - 5119
EP - 5121
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 8 A
ER -