Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide

Gow Huei Yang; Jun Dar Hwang; Chih Hsueh Lan; Chien Mao Chan; Hone Zem Chen; Shoou Jinn Chang

doi:10.1143/JJAP.46.5119

Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide

Gow Huei Yang, Jun Dar Hwang, Chih Hsueh Lan, Chien Mao Chan, Hone Zem Chen, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A low-cost and reliable SiO₂ insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H ₂SiF₆ and H₃BP₃ solutions. The interface-trap density, D_it, was estimated to be 1.2 × 10 ¹² cm^-2 eV^-1 for the as-grown, not annealed LPD-SiO₂ layers. It was found that the leakage current density was 2.06 × 10^-5 A/cm² at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO₂/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO₂ layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO₂/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

Original language	English
Pages (from-to)	5119-5121
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.46.5119
Publication status	Published - 2007 Aug 6

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{f1614d2b58274355805200ccc5de5fa2,

title = "Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide",

abstract = "A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.",

author = "Yang, {Gow Huei} and Hwang, {Jun Dar} and Lan, {Chih Hsueh} and Chan, {Chien Mao} and Chen, {Hone Zem} and Chang, {Shoou Jinn}",

year = "2007",

month = aug,

day = "6",

doi = "10.1143/JJAP.46.5119",

language = "English",

volume = "46",

pages = "5119--5121",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

}

Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide. / Yang, Gow Huei; Hwang, Jun Dar; Lan, Chih Hsueh; Chan, Chien Mao; Chen, Hone Zem; Chang, Shoou Jinn.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 8 A, 06.08.2007, p. 5119-5121.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide

AU - Yang, Gow Huei

AU - Hwang, Jun Dar

AU - Lan, Chih Hsueh

AU - Chan, Chien Mao

AU - Chen, Hone Zem

AU - Chang, Shoou Jinn

PY - 2007/8/6

Y1 - 2007/8/6

N2 - A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

AB - A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H 2SiF6 and H3BP3 solutions. The interface-trap density, Dit, was estimated to be 1.2 × 10 12 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06 × 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

UR - http://www.scopus.com/inward/record.url?scp=34547854361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547854361&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.5119

DO - 10.1143/JJAP.46.5119

M3 - Article

AN - SCOPUS:34547854361

VL - 46

SP - 5119

EP - 5121

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 A

ER -