Abstract
The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN (n = 1 × 1019 cm-3) without thermal annealing and the measured specific contact resistance was 5.1 × 10-4 Ω cm2. This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN (n = 1 × 1019 cm-3) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts.
Original language | English |
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Pages (from-to) | 2081-2084 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 43 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1999 Nov |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering