Indium tin oxide ohmic contact to highly doped n-GaN

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang

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38 Citations (Scopus)


The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN (n = 1 × 1019 cm-3) without thermal annealing and the measured specific contact resistance was 5.1 × 10-4 Ω cm2. This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN (n = 1 × 1019 cm-3) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts.

Original languageEnglish
Pages (from-to)2081-2084
Number of pages4
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 1999 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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