TY - JOUR
T1 - Indium-tin-oxide thin films deposited on polyethylene-terephthalate substrates by substrate-biased RF magnetron sputtering
AU - Liang, Chih Hao
AU - Qi, Xiaoding
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan under the grant number: 99-2221-E-006-129-MY3 , and by the National Cheng Kung University via the Top University Project.
PY - 2013/9/25
Y1 - 2013/9/25
N2 - Indium-tin-oxide (ITO) thin films were deposited on the polyethylene terephthalate (PET) substrates at low temperature (70°C) by RF magnetron sputtering. In order to increase the adatoms mobility at the low growth temperature, the substrate was biased up to -120V in order to increase the kinetic energy of the incoming ions. A series of experiments were carried out to study the influences of the substrate biases on the structural, electrical, and optical properties of the grown films. The results showed that the ITO films grown under the bias exhibited higher crystallinity than those deposited without a bias. The transmittance and electrical properties were also enhanced for the biased films. The lowest resistivity (6.66×10-4Ω-cm) was achieved under the bias of -40V. The X-ray photoelectron spectroscopy revealed that with the application of substrate bias the Sn4+/Sn2+ ratio was increased, while the portion of the amorphous phase was reduced.
AB - Indium-tin-oxide (ITO) thin films were deposited on the polyethylene terephthalate (PET) substrates at low temperature (70°C) by RF magnetron sputtering. In order to increase the adatoms mobility at the low growth temperature, the substrate was biased up to -120V in order to increase the kinetic energy of the incoming ions. A series of experiments were carried out to study the influences of the substrate biases on the structural, electrical, and optical properties of the grown films. The results showed that the ITO films grown under the bias exhibited higher crystallinity than those deposited without a bias. The transmittance and electrical properties were also enhanced for the biased films. The lowest resistivity (6.66×10-4Ω-cm) was achieved under the bias of -40V. The X-ray photoelectron spectroscopy revealed that with the application of substrate bias the Sn4+/Sn2+ ratio was increased, while the portion of the amorphous phase was reduced.
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U2 - 10.1016/j.surfcoat.2012.06.068
DO - 10.1016/j.surfcoat.2012.06.068
M3 - Article
AN - SCOPUS:84882824355
SN - 0257-8972
VL - 231
SP - 205
EP - 208
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -