Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang; W. C. Liu; M. S. Jame; Y. H. Wang; Serge Luryi; Simon M. Sze

doi:10.1109/EDL.1986.26451

Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang, W. C. Liu, M. S. Jame, Y. H. Wang, Serge Luryi, Simon M. Sze

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

Original language	English
Pages (from-to)	497-499
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1986.26451
Publication status	Published - 1986 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1986.26451

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abstract = "A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.",

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AU - Liu, W. C.

AU - Jame, M. S.

AU - Wang, Y. H.

AU - Luryi, Serge

AU - Sze, Simon M.

PY - 1986/9

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JF - IEEE Electron Device Letters

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Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Abstract

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