Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang, W. C. Liu, M. S. Jame, Y. H. Wang, Serge Luryi, Simon M. Sze

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number9
DOIs
Publication statusPublished - 1986 Sep

Fingerprint

Molecular beam epitaxy
Transistors
Electron devices
Two dimensional electron gas
Hot electrons
Semiconductor quantum wells
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, Chun Yen ; Liu, W. C. ; Jame, M. S. ; Wang, Y. H. ; Luryi, Serge ; Sze, Simon M. / Induced Base Transistor Fabricated by Molecular Beam Epitaxy. In: IEEE Electron Device Letters. 1986 ; Vol. 7, No. 9. pp. 497-499.
@article{47d8bed692ef42fa8edc80542235f025,
title = "Induced Base Transistor Fabricated by Molecular Beam Epitaxy",
abstract = "A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.",
author = "Chang, {Chun Yen} and Liu, {W. C.} and Jame, {M. S.} and Wang, {Y. H.} and Serge Luryi and Sze, {Simon M.}",
year = "1986",
month = "9",
doi = "10.1109/EDL.1986.26451",
language = "English",
volume = "7",
pages = "497--499",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Induced Base Transistor Fabricated by Molecular Beam Epitaxy. / Chang, Chun Yen; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, Serge; Sze, Simon M.

In: IEEE Electron Device Letters, Vol. 7, No. 9, 09.1986, p. 497-499.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Induced Base Transistor Fabricated by Molecular Beam Epitaxy

AU - Chang, Chun Yen

AU - Liu, W. C.

AU - Jame, M. S.

AU - Wang, Y. H.

AU - Luryi, Serge

AU - Sze, Simon M.

PY - 1986/9

Y1 - 1986/9

N2 - A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

AB - A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

UR - http://www.scopus.com/inward/record.url?scp=84935096334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84935096334&partnerID=8YFLogxK

U2 - 10.1109/EDL.1986.26451

DO - 10.1109/EDL.1986.26451

M3 - Article

AN - SCOPUS:84935096334

VL - 7

SP - 497

EP - 499

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -