Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang, W. C. Liu, M. S. Jame, Y. H. Wang, Serge Luryi, Simon M. Sze

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1986 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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