Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang; W. C. Liu; M. S. Jame; Y. H. Wang; Serge Luryi; Simon M. Sze

doi:10.1109/EDL.1986.26451

Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Chun Yen Chang
, W. C. Liu
, M. S. Jame
, Y. H. Wang
, Serge Luryi
, Simon M. Sze

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

Original language	English
Pages (from-to)	497-499
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1986.26451
Publication status	Published - 1986 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1986.26451

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abstract = "A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.",

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AU - Luryi, Serge

AU - Sze, Simon M.

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AB - A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain a has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

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Induced Base Transistor Fabricated by Molecular Beam Epitaxy

Abstract

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