Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung

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67 Citations (Scopus)

Abstract

This work investigates inductively coupled plasma (ICP) etching processes of GaN. Etching behaviors are also characterized by varying the ICP power, Cl2/Ar or Cl2/N2 mixing ratio, radio-frequency (rf) power, and chamber pressure. Experimental results indicate that the etching profiles are highly anisotropic over the range of etching conditions. Maximum etching rates of 8200 Å/min in Cl2/Ar plasma and 8330 Å/min in Cl2/N2 plasma are obtained as well. In addition, pressure, ICP power, Cl2/Ar(N2) flow ratio and rf power significantly influence etching rate and surface morphology. In particular, dc bias heavily influences the etching rates, suggesting that the ion-bombardment effect is an important factor of these etching processes.

Original languageEnglish
Pages (from-to)1970-1974
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number3
DOIs
Publication statusPublished - 1999 Feb

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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