Inductively coupled plasma etching of GaN using Cl2/He gases

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, S. C. Shei, S. J. Hsu

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19 Citations (Scopus)


We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl2/Ar and Cl2/He. The maximum etching rate could reach 8000 Å min-1 for n-GaN etched in Cl2/Ar and 8400 Å min-1 for n-GaN etched in Cl2/He. Furthermore, it was found that the specific contact resistance is 4.2 × 10-4 and 1.37 × 10-6 Ω-cm2 for n-GaN etched by Cl2/Ar and Cl2/He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
Publication statusPublished - 2003 Feb 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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