Inductively coupled plasma etching of GaN using Cl2/He gases

Yu-Cheng Lin; Shoou-Jinn Chang; Y. K. Su; S. C. Shei; S. J. Hsu

doi:10.1016/S0921-5107(02)00756-0

Inductively coupled plasma etching of GaN using Cl₂/He gases

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, S. C. Shei, S. J. Hsu

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl₂/Ar and Cl₂/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl₂/Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl₂/Ar and Cl₂/He. The maximum etching rate could reach 8000 Å min^-1 for n-GaN etched in Cl₂/Ar and 8400 Å min^-1 for n-GaN etched in Cl₂/He. Furthermore, it was found that the specific contact resistance is 4.2 × 10^-4 and 1.37 × 10^-6 Ω-cm² for n-GaN etched by Cl₂/Ar and Cl₂/He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching.

Original language	English
Pages (from-to)	60-64
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	98
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(02)00756-0
Publication status	Published - 2003 Feb 25

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Inductively coupled plasma etching of GaN using Cl2/He gases",

abstract = "We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl2/Ar and Cl2/He. The maximum etching rate could reach 8000 {\AA} min-1 for n-GaN etched in Cl2/Ar and 8400 {\AA} min-1 for n-GaN etched in Cl2/He. Furthermore, it was found that the specific contact resistance is 4.2 × 10-4 and 1.37 × 10-6 Ω-cm2 for n-GaN etched by Cl2/Ar and Cl2/He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching.",

author = "Yu-Cheng Lin and Shoou-Jinn Chang and Su, {Y. K.} and Shei, {S. C.} and Hsu, {S. J.}",

year = "2003",

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doi = "10.1016/S0921-5107(02)00756-0",

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T1 - Inductively coupled plasma etching of GaN using Cl2/He gases

AU - Lin, Yu-Cheng

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Shei, S. C.

AU - Hsu, S. J.

PY - 2003/2/25

Y1 - 2003/2/25

N2 - We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl2/Ar and Cl2/He. The maximum etching rate could reach 8000 Å min-1 for n-GaN etched in Cl2/Ar and 8400 Å min-1 for n-GaN etched in Cl2/He. Furthermore, it was found that the specific contact resistance is 4.2 × 10-4 and 1.37 × 10-6 Ω-cm2 for n-GaN etched by Cl2/Ar and Cl2/He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching.

AB - We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/Ar and Cl2/He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl2/Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl2/Ar and Cl2/He. The maximum etching rate could reach 8000 Å min-1 for n-GaN etched in Cl2/Ar and 8400 Å min-1 for n-GaN etched in Cl2/He. Furthermore, it was found that the specific contact resistance is 4.2 × 10-4 and 1.37 × 10-6 Ω-cm2 for n-GaN etched by Cl2/Ar and Cl2/He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching.

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