Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Chang Hong Shen; Jia Min Shieh; Jung Y. Huang; Hao Chung Kuo; Chih Wei Hsu; Bau Tong Dai; Ching Ting Lee; Ci Ling Pan; Fu Liang Yang

doi:10.1063/1.3615650

Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Chang Hong Shen, Jia Min Shieh, Jung Y. Huang, Hao Chung Kuo, Chih Wei Hsu, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Fu Liang Yang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 10¹⁵cm^-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

Original language	English
Article number	033510
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3615650
Publication status	Published - 2011 Jul 18

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3615650

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title = "Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability",

abstract = "We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.",

author = "Shen, {Chang Hong} and Shieh, {Jia Min} and Huang, {Jung Y.} and Kuo, {Hao Chung} and Hsu, {Chih Wei} and Dai, {Bau Tong} and Lee, {Ching Ting} and Pan, {Ci Ling} and Yang, {Fu Liang}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research.",

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T1 - Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Huang, Jung Y.

AU - Kuo, Hao Chung

AU - Hsu, Chih Wei

AU - Dai, Bau Tong

AU - Lee, Ching Ting

AU - Pan, Ci Ling

AU - Yang, Fu Liang

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research.

PY - 2011/7/18

Y1 - 2011/7/18

N2 - We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

AB - We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015cm-3). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates.

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Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

Abstract

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