Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl2/BCl3/Ar plasma

Tzong Bin Wang, Wei Chou Hsu, Yen Wei Che, Yeong Jia Chen

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2 Citations (Scopus)


InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 800°C- and 1000°C-grown p-GaN cap layers were fabricated. Inductively coupled plasma (ICP) using Cl2/BCl3/Ar was used to etch the surface of the InGaN/GaN LEDs. Different compositions of the Cl 2/BCl3/Ar gas system were used to reduce surface roughness after the plasma etching process, that results from the low-temperature (800°C)-grown p-type GaN with a higher hole concentration. The maximum etching rate (∼6000 Å/min) was attained approximately 10% BCl3 in Cl2/BCl3/Ar plasma. Sputter desorption and surface morphology are significantly improved. Furthermore, surface oxidation is suppressed.

Original languageEnglish
Pages (from-to)6800-6802
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 A
Publication statusPublished - 2006 Sep 7

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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