Influence of A-site deficiency on oxygen-vacancy-related dielectric relaxation, electrical and temperature stability properties of CuO-doped NKN-based piezoelectric ceramics

Cheng Che Tsai, Sheng Yuan Chu, Cheng Shong Hong, Song Ling Yang

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11 Citations (Scopus)

Abstract

The lead-free ceramics with composition of (Na0.5K 0.5)0.9975-xCa0.0025NbO3+1 mol% CuO (NKN-100x-C-1,where x=0, 0.02, 0.03, 0.04, 0.06, 0.08) were synthesized by the mixed-oxide method at a sintering temperature of 1080 °C. Effects of Na and K deficiency amounts of x on the oxygen vacancies relating to the electrical and temperature stability properties were systematically investigated. Experimental results showed that the bulk densities of composition ceramics increased with increasing x contents due to the sintering aid of TTB formation at the grain boundary. The electrical properties of NKCN-100x-C-1 ceramics exhibited the optimum values: bulk density ρ∼ 4.45 g/cm3, dielectric constant (ε33T0)∼255, dielectric loss (tanδ)∼0.003, kp∼ 0.38, k t∼ 0.49, g33∼ 39×10-3 V-m/N, and Qm∼ 2850. Furthermore, the change rate of kp and Qm versus temperature (TCkp and TCQm) could increase by 7% and 35% in the temperature range 20-120 °C, respectively. This may be due to the decrease of mechanical damping. The imaginary part impedance of NKN-100x-C-1 ceramics with the x variation was evaluated, and the activation energy was correspondingly calculated, which disclosed the deficient x amounts correlating with the oxygen vacancy and high Qm value.

Original languageEnglish
Pages (from-to)S165-S170
JournalCeramics International
Volume39
Issue numberSUPPL.1
DOIs
Publication statusPublished - 2013 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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