Influence of Al doping on random lasing in ZnO nanorods

N. Fadzliana; S. A.M. Samsuri; S. Y. Chan; H. C. Hsu; W. Maryam

doi:10.1016/j.optlastec.2019.106004

Influence of Al doping on random lasing in ZnO nanorods

N. Fadzliana, S. A.M. Samsuri, S. Y. Chan, H. C. Hsu, W. Maryam

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.

Original language	English
Article number	106004
Journal	Optics and Laser Technology
Volume	124
DOIs	https://doi.org/10.1016/j.optlastec.2019.106004
Publication status	Published - 2020 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1016/j.optlastec.2019.106004

Cite this

@article{3c0dc63164d74f418c476e410513f956,

title = "Influence of Al doping on random lasing in ZnO nanorods",

abstract = "Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.",

author = "N. Fadzliana and Samsuri, {S. A.M.} and Chan, {S. Y.} and Hsu, {H. C.} and W. Maryam",

note = "Funding Information: The authors are grateful for funding from USM Bridging grant [ 30304/PFIZIK/6316077 ] and The Ministry of Science and Technology of Taiwan ( MOST 105-2112-M-006-004-MY3 ). Funding Information: The authors are grateful for funding from USM Bridging grant [30304/PFIZIK/6316077] and The Ministry of Science and Technology of Taiwan (MOST 105-2112-M-006-004-MY3). Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2020",

month = apr,

doi = "10.1016/j.optlastec.2019.106004",

language = "English",

volume = "124",

journal = "Optics and Laser Technology",

issn = "0030-3992",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Influence of Al doping on random lasing in ZnO nanorods

AU - Fadzliana, N.

AU - Samsuri, S. A.M.

AU - Chan, S. Y.

AU - Hsu, H. C.

AU - Maryam, W.

N1 - Funding Information: The authors are grateful for funding from USM Bridging grant [ 30304/PFIZIK/6316077 ] and The Ministry of Science and Technology of Taiwan ( MOST 105-2112-M-006-004-MY3 ). Funding Information: The authors are grateful for funding from USM Bridging grant [30304/PFIZIK/6316077] and The Ministry of Science and Technology of Taiwan (MOST 105-2112-M-006-004-MY3). Publisher Copyright: © 2019 Elsevier Ltd

PY - 2020/4

Y1 - 2020/4

N2 - Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.

AB - Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.

UR - http://www.scopus.com/inward/record.url?scp=85076846588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076846588&partnerID=8YFLogxK

U2 - 10.1016/j.optlastec.2019.106004

DO - 10.1016/j.optlastec.2019.106004

M3 - Article

AN - SCOPUS:85076846588

SN - 0030-3992

VL - 124

JO - Optics and Laser Technology

JF - Optics and Laser Technology

M1 - 106004

ER -

Influence of Al doping on random lasing in ZnO nanorods

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this