Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Cheng Liang Wang, Ming Chang Tsai, Jyh Rong Gong, Wei Tsai Liao, Ping Yuan Lin, Kuo Yi Yen, Chia Chi Chang, Hsin Yueh Lin, Shen Kwang Hwang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.

Original languageEnglish
Pages (from-to)180-183
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume138
Issue number2
DOIs
Publication statusPublished - 2007 Mar 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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