Abstract
Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.
Original language | English |
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Pages (from-to) | 180-183 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 138 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2007 Mar 25 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering