Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Cheng Liang Wang, Ming Chang Tsai, Jyh Rong Gong, Wei Tsai Liao, Ping Yuan Lin, Kuo Yi Yen, Chia Chi Chang, Hsin Yueh Lin, Sheng-Kwang Hwang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance.

Original languageEnglish
Pages (from-to)180-183
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume138
Issue number2
DOIs
Publication statusPublished - 2007 Mar 25

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Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Leakage currents
leakage
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wang, Cheng Liang ; Tsai, Ming Chang ; Gong, Jyh Rong ; Liao, Wei Tsai ; Lin, Ping Yuan ; Yen, Kuo Yi ; Chang, Chia Chi ; Lin, Hsin Yueh ; Hwang, Sheng-Kwang. / Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2007 ; Vol. 138, No. 2. pp. 180-183.
@article{280fe3345ca84b6ebaf6894a115e1388,
title = "Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes",
abstract = "Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance.",
author = "Wang, {Cheng Liang} and Tsai, {Ming Chang} and Gong, {Jyh Rong} and Liao, {Wei Tsai} and Lin, {Ping Yuan} and Yen, {Kuo Yi} and Chang, {Chia Chi} and Lin, {Hsin Yueh} and Sheng-Kwang Hwang",
year = "2007",
month = "3",
day = "25",
doi = "10.1016/j.mseb.2007.01.005",
language = "English",
volume = "138",
pages = "180--183",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2",

}

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes. / Wang, Cheng Liang; Tsai, Ming Chang; Gong, Jyh Rong; Liao, Wei Tsai; Lin, Ping Yuan; Yen, Kuo Yi; Chang, Chia Chi; Lin, Hsin Yueh; Hwang, Sheng-Kwang.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 138, No. 2, 25.03.2007, p. 180-183.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

AU - Wang, Cheng Liang

AU - Tsai, Ming Chang

AU - Gong, Jyh Rong

AU - Liao, Wei Tsai

AU - Lin, Ping Yuan

AU - Yen, Kuo Yi

AU - Chang, Chia Chi

AU - Lin, Hsin Yueh

AU - Hwang, Sheng-Kwang

PY - 2007/3/25

Y1 - 2007/3/25

N2 - Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance.

AB - Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance.

UR - http://www.scopus.com/inward/record.url?scp=33847265392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847265392&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2007.01.005

DO - 10.1016/j.mseb.2007.01.005

M3 - Article

VL - 138

SP - 180

EP - 183

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -