TY - JOUR
T1 - Influence of annealing ambience on TiO2 film ultraviolet photodetector
AU - Li, Jyun Yi
AU - Chang, Sheng Po
AU - Hsu, Ming Hung
AU - Chang, Shoou Jinn
N1 - Funding Information:
This work was supported by the National Science Council under contract number MOST 103-2221-E-006-098. This work was also supported in part by the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Taiwan, and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.
Publisher Copyright:
© 2016 The Electrochemical Society. All rights reserved.
PY - 2017
Y1 - 2017
N2 - This study focuses on TiO2 thin films grown on quartz substrates using radio frequency magnetron sputtering. These films were annealed under argon, air, oxygen, and nitrogen ambients via a fused-silica tube furnace, and were then used to fabricate metalsemiconductor- metal (MSM) ultraviolet (UV) photodetectors (PDs). Further, all fabricated detectors exhibited a low dark current. Finally, we observed that under an N2 ambient, we could acquire the best parameters for annealing TiO2 UV PDs, with a maximum responsivity of 1.73×10-2 A/W, while the UV-to-visible rejection ratio achieved five orders of magnitude with a 330-nm illumination at 10 V applied bias. We attributed the reduction in dark current to the filling of oxygen vacancies from N2; hence, the response was improved. We believe that this method can be used to develop a highly-applicable and low-cost device.
AB - This study focuses on TiO2 thin films grown on quartz substrates using radio frequency magnetron sputtering. These films were annealed under argon, air, oxygen, and nitrogen ambients via a fused-silica tube furnace, and were then used to fabricate metalsemiconductor- metal (MSM) ultraviolet (UV) photodetectors (PDs). Further, all fabricated detectors exhibited a low dark current. Finally, we observed that under an N2 ambient, we could acquire the best parameters for annealing TiO2 UV PDs, with a maximum responsivity of 1.73×10-2 A/W, while the UV-to-visible rejection ratio achieved five orders of magnitude with a 330-nm illumination at 10 V applied bias. We attributed the reduction in dark current to the filling of oxygen vacancies from N2; hence, the response was improved. We believe that this method can be used to develop a highly-applicable and low-cost device.
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U2 - 10.1149/2.0121702jss
DO - 10.1149/2.0121702jss
M3 - Article
AN - SCOPUS:85011411601
SN - 2162-8769
VL - 6
SP - Q3056-Q3060
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 2
ER -