Influence of channel doping-profile on camel-gate field effect transistors

Wen Shiung Lour, Jung Hui Tsai, Lib Wen Laih, Wen Chau Liu

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report the performance of GaAs camel-gate FET's and its dependence on device parameters. In particular, the performance dependence on the doping-profile of a channel was investigated. In this study, one-step, bi-step, and tri-step doping channels with the same doping-thickness product are employed in camel-gate FET's, while keeping other parameters unchanged. For a one-step doping channel FKT, theoretical analysis reveals that a high doping channel would provide a large transconductance which is suitable for logic applications. Decreasing the channel concentration increases the drain current and the barrier height. For a tri-step doping channel FET, it is found that the output drain current and the barrier height remain large and the relatively voltage-independent transconductance is also increased. These are the requirements for the large input signal power amplifiers. A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density larger than 750 mA/mm and a potential barrier greater than 1.0 V. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is up to +1.5 V. A 1.5 × 100 μm2 device is found to have a ft of 30 GHz with a very low input capacitance.

Original languageEnglish
Pages (from-to)871-876
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume43
Issue number6
DOIs
Publication statusPublished - 1996 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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