TY - JOUR
T1 - Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells
AU - Awni, Rasha A.
AU - Song, Zhaoning
AU - Chen, Cong
AU - Li, Chongwen
AU - Wang, Changlei
AU - Razooqi, Mohammed A.
AU - Chen, Lei
AU - Wang, Xiaoming
AU - Ellingson, Randy J.
AU - Li, Jian V.
AU - Yan, Yanfa
N1 - Publisher Copyright:
© 2020 Elsevier Inc.
PY - 2020/3/18
Y1 - 2020/3/18
N2 - Capacitance-based techniques have been used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Here, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, because the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer because there is no trapping and de-trapping of charge carriers in the perovskite layer. We further find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.
AB - Capacitance-based techniques have been used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Here, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, because the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer because there is no trapping and de-trapping of charge carriers in the perovskite layer. We further find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.
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U2 - 10.1016/j.joule.2020.01.012
DO - 10.1016/j.joule.2020.01.012
M3 - Article
AN - SCOPUS:85081551577
SN - 2542-4351
VL - 4
SP - 644
EP - 657
JO - Joule
JF - Joule
IS - 3
ER -