Influence of damp heat on the electrical, optical, and morphological properties of encapsulated CuInGaSe 2 devices

R. Sundaramoorthy, F. J. Pern, G. Teeter, Jian V. Li, M. Young, D. Kuciauskas, N. Call, F. Yan, B. To, S. Johnston, R. Noufi, T. A. Gessert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

CuInGaSe 2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85°C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH) 2 from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages3404-3409
Number of pages6
DOIs
Publication statusPublished - 2011 Dec 1
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11-06-1911-06-24

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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