Influence of deposition pressure and rf power on the structure and electrical properties of Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering

Cheng Liang Huang, Jun Jie Wang, Cheng Hsing Hsu

Research output: Contribution to journalArticle

Abstract

ZnO-doped Zr0.8Sn0.2TiO4 (ZST) films deposited on n-type Si (100) substrates at different deposition pressures and if powers were investigated. The structural and morphological characteristics analyzed by x-ray diffraction (XRD), atomic force microscopy, and scanning electron microscopy were found to be affected by deposition conditions, such as deposition pressure (2, 5, and 8 mTorr) and rf power (250, 350, and 450 W). Highly oriented ZST (101) and (111) perpendicular to the substrate surface were identified at a deposition pressure of 8 mTorr and rf power of 450 W. The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with increasing rf power. From observing the surface morphology, ZST thin films exhibit a columnar structure. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator-semiconductor capacitor structures. The leakage current decreased with increasing rf power and deposition pressure. As rf power=450 W and deposition pressure=8 mTorr, a leakage-current density of 2.26 × 10-9 A/cm2 was obtained at 5 V.

Original languageEnglish
Pages (from-to)299-305
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number2
DOIs
Publication statusPublished - 2007 Apr 8

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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