Influence of doping rate in Er3+: ZnO films on emission characteristics

L. Douglas, R. Mundle, R. Konda, C. E. Bonner, A. K. Pradhan, D. R. Sahu, Jow-Lay Huang

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


High-quality Er3+: ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2wt. % Er doping. Two peaks were observed at approximately 1.54 μm in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er3+ ions in the form of ErO6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.

Original languageEnglish
Pages (from-to)815-817
Number of pages3
JournalOptics Letters
Issue number8
Publication statusPublished - 2008 Apr 15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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