Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on the transport properties of extremely scaled (length of 10 nm and width of 1-4 nm) graphene nanoribbons. We report the dependence of the transport gap, on-and off-state conductances, and on-off ratio on edge-defect density, vacancy density, and potential fluctuation amplitude. For the smallest devices and realistic lattice defect densities, the transport gap increases by up to ∼300%, and the on-off ratio reaches almost ∼106. We also report a rather high variation of the transport gap and on-off ratio. In contrast, we find that the potential fluctuations have a negligible impact on the transport gap and cause a relatively modest increase of the on-off ratio.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering