Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

Ssu I. Fu, Tzu Pin Chen, Rong Chau Liu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this work, the characteristics of the InGaPGaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 Å, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.

Original languageEnglish
Pages (from-to)H289-H292
JournalJournal of the Electrochemical Society
Volume154
Issue number4
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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