Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

Ssu I. Fu; Tzu Pin Chen; Rong Chau Liu; Shiou Ying Cheng; Po Hsien Lai; Yan Ying Tsai; Ching Wen Hung; Wen Chau Liu

doi:10.1149/1.2435628

Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

Ssu I. Fu, Tzu Pin Chen, Rong Chau Liu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work, the characteristics of the InGaPGaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 Å, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.

Original language	English
Pages (from-to)	H289-H292
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	4
DOIs	https://doi.org/10.1149/1.2435628
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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@article{cd9325d4c9d147859342da24d5eb26c7,

title = "Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance",

abstract = "In this work, the characteristics of the InGaPGaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 {\AA}, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.",

author = "Fu, {Ssu I.} and Chen, {Tzu Pin} and Liu, {Rong Chau} and Cheng, {Shiou Ying} and Lai, {Po Hsien} and Tsai, {Yan Ying} and Hung, {Ching Wen} and Liu, {Wen Chau}",

year = "2007",

doi = "10.1149/1.2435628",

language = "English",

volume = "154",

pages = "H289--H292",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "4",

}

Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance. / Fu, Ssu I.; Chen, Tzu Pin; Liu, Rong Chau; Cheng, Shiou Ying; Lai, Po Hsien; Tsai, Yan Ying; Hung, Ching Wen; Liu, Wen Chau.

In: Journal of the Electrochemical Society, Vol. 154, No. 4, 2007, p. H289-H292.

Research output: Contribution to journal › Article › peer-review

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T1 - Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

AU - Fu, Ssu I.

AU - Chen, Tzu Pin

AU - Liu, Rong Chau

AU - Cheng, Shiou Ying

AU - Lai, Po Hsien

AU - Tsai, Yan Ying

AU - Hung, Ching Wen

AU - Liu, Wen Chau

PY - 2007

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AB - In this work, the characteristics of the InGaPGaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 Å, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found.

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