Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Kuei Yi Chu; Shiou Ying Cheng; Tzu Pin Chen; Ching Wen Hung; Li Yang Chen; Tsung Han Tsai; Wen Chau Liu; Lu An Chen

doi:10.1016/j.spmi.2008.01.018

Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Kuei Yi Chu, Shiou Ying Cheng, Tzu Pin Chen, Ching Wen Hung, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu, Lu An Chen

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 Å.

Original language	English
Pages (from-to)	368-374
Number of pages	7
Journal	Superlattices and Microstructures
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/j.spmi.2008.01.018
Publication status	Published - 2008 Apr 1

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2008.01.018

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title = "Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor",

abstract = "In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 {\AA}.",

author = "Chu, {Kuei Yi} and Cheng, {Shiou Ying} and Chen, {Tzu Pin} and Hung, {Ching Wen} and Chen, {Li Yang} and Tsai, {Tsung Han} and Liu, {Wen Chau} and Chen, {Lu An}",

year = "2008",

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doi = "10.1016/j.spmi.2008.01.018",

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journal = "Superlattices and Microstructures",

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T1 - Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

AU - Chu, Kuei Yi

AU - Cheng, Shiou Ying

AU - Chen, Tzu Pin

AU - Hung, Ching Wen

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen Chau

AU - Chen, Lu An

PY - 2008/4/1

Y1 - 2008/4/1

N2 - In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 Å.

AB - In this work, the characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with various emitter-ledge thicknesses are comprehensively studied and demonstrated. Based on the two-dimensional analysis, some important parameters such as the recombination rate and DC characteristics are studied. The simulated analyses are in good agreement with experimental results. It is known that better HBT performance, including lower recombination rate in the surface channel, and higher DC current gain are obtained in the studied devices with the emitter ledge thickness between 100 and 200 Å.

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M3 - Article

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SN - 0749-6036

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SP - 368

EP - 374

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Influence of emitter-ledge thickness on the surface- recombination mechanism of InGaP/GaAs heterojunction bipolar transistor

Abstract

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