Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors

Kuei Yi Chu, Shiou Ying Cheng, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Jung Hui Tsai, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A comprehensive study of the InGaP ledge width effect on the performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) is demonstrated. It is shown that the electron density and recombination rate at the surface channel are decreased with increasing the InGaP ledge width. However, the longer InGaP ledge width increases the base-collector junction area which in turn deteriorates the high frequency performance. According to the theoretical analysis and experimental results, the device with an InGaP ledge width of 0.8 ?m shows the best and acceptable DC and RF performance.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages176-178
Number of pages3
DOIs
Publication statusPublished - 2008 Sept 8
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
Country/TerritoryChina
CityShanghai
Period08-05-1508-05-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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