@inproceedings{62c6bd9336174fb38289f7195bca8e6c,
title = "Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors",
abstract = "A comprehensive study of the InGaP ledge width effect on the performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) is demonstrated. It is shown that the electron density and recombination rate at the surface channel are decreased with increasing the InGaP ledge width. However, the longer InGaP ledge width increases the base-collector junction area which in turn deteriorates the high frequency performance. According to the theoretical analysis and experimental results, the device with an InGaP ledge width of 0.8 ?m shows the best and acceptable DC and RF performance.",
author = "Chu, {Kuei Yi} and Cheng, {Shiou Ying} and Chen, {Tzu Pin} and Chen, {Li Yang} and Tsai, {Tsung Han} and Tsai, {Jung Hui} and Wen-Chau Liu",
year = "2008",
month = sep,
day = "8",
doi = "10.1109/IWJT.2008.4540044",
language = "English",
isbn = "9781424417384",
series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
pages = "176--178",
booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",
note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",
}