Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors

Jung Hui Tsai, You Ren Wu, Chung Cheng Chiang, Fu Min Wang, Wen Chau Liu

Research output: Contribution to journalArticle

Abstract

In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transistors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and compared. As to the device without the recesses structure, a second channel within the n +-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications.

Original languageEnglish
Pages (from-to)1222-1225
Number of pages4
JournalSemiconductors
Volume48
Issue number9
DOIs
Publication statusPublished - 2014 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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