TY - GEN
T1 - INFLUENCE OF HIGH ELECTRIC FIELD CAPTURE AND EMISSION OF A DEEP-LEVEL CENTER IN VLSI DEVICE STRUCTURES.
AU - Li, G. P.
AU - Wu, Y.
AU - Chang, M.
AU - Wang, K. L.
PY - 1984
Y1 - 1984
N2 - Two new techniques, reverse-bias pulsed deep-level transient spectroscopy (RDLTS) and injection deep-level transient spectroscopy (IDLTS), for use in measuring electric field dependent carrier emission and capture rates, respectively, are described in detail. The Au donor center at E//V plus 0. 35 ev was studied by these two methods as an example. The results indicate that the carrier emission rate increases and that the carrier capture rate decreases in the presence of high electric field. The implication of the enhanced emission and retarded capture is discussed in terms of leakage current and premature breakdown in VLSI device application.
AB - Two new techniques, reverse-bias pulsed deep-level transient spectroscopy (RDLTS) and injection deep-level transient spectroscopy (IDLTS), for use in measuring electric field dependent carrier emission and capture rates, respectively, are described in detail. The Au donor center at E//V plus 0. 35 ev was studied by these two methods as an example. The results indicate that the carrier emission rate increases and that the carrier capture rate decreases in the presence of high electric field. The implication of the enhanced emission and retarded capture is discussed in terms of leakage current and premature breakdown in VLSI device application.
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U2 - 10.7567/ssdm.1984.b-3-4
DO - 10.7567/ssdm.1984.b-3-4
M3 - Conference contribution
AN - SCOPUS:0021627702
SN - 4930813077
SN - 9784930813077
T3 - Conference on Solid State Devices and Materials
SP - 107
EP - 110
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -