Influence of indium doping on the activity of gallium oxynitride for water splitting under visible light irradiation

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Abstract

Visible-light-active indium-doped gallium oxynitrides with a wurtzite-like structure were synthesized from nitridation of In(OH)3-containing Ga(OH)3 under NH3 flow at 625 °C and used for photocatalytic water splitting. This synthesis method yielded a homogeneous In distribution in gallium oxynitride solid solutions for Ga replacement levels of up to 1%. An appropriate amount of In substitution for Ga, approximately 0.5%, significantly enhanced the activity of gallium oxynitride in the visible-light-induced evolutions of H2 and O2 gases from methanol and AgNO3 solutions, respectively. X-ray photoelectron spectroscopic analysis indicated that In doping increased the dispersion of hybridized orbitals in the valence band of gallium oxynitride. This can enhance charge mobility in gallium oxynitride and thus photocatalytic activity. A higher degree of In doping resulted in nucleation of InN-like oxynitride on the gallium oxynitride surface and degraded the photocatalytic activity. This study demonstrates that band structure engineering of gallium oxynitride powders with In doping is a facile procedure for obtaining visible-light sensitive photocatalysts with high activities.

Original languageEnglish
Pages (from-to)2805-2811
Number of pages7
JournalJournal of Physical Chemistry C
Volume115
Issue number6
DOIs
Publication statusPublished - 2011 Feb 17

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Gallium
Indium
water splitting
oxynitrides
gallium
indium
Doping (additives)
Irradiation
irradiation
Water
Spectroscopic analysis
Nitridation
Photocatalysts
Photoelectrons
Valence bands
spectroscopic analysis
Band structure
Powders
Methanol
Solid solutions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

@article{162c0f62412943e3875cc6f991514b67,
title = "Influence of indium doping on the activity of gallium oxynitride for water splitting under visible light irradiation",
abstract = "Visible-light-active indium-doped gallium oxynitrides with a wurtzite-like structure were synthesized from nitridation of In(OH)3-containing Ga(OH)3 under NH3 flow at 625 °C and used for photocatalytic water splitting. This synthesis method yielded a homogeneous In distribution in gallium oxynitride solid solutions for Ga replacement levels of up to 1{\%}. An appropriate amount of In substitution for Ga, approximately 0.5{\%}, significantly enhanced the activity of gallium oxynitride in the visible-light-induced evolutions of H2 and O2 gases from methanol and AgNO3 solutions, respectively. X-ray photoelectron spectroscopic analysis indicated that In doping increased the dispersion of hybridized orbitals in the valence band of gallium oxynitride. This can enhance charge mobility in gallium oxynitride and thus photocatalytic activity. A higher degree of In doping resulted in nucleation of InN-like oxynitride on the gallium oxynitride surface and degraded the photocatalytic activity. This study demonstrates that band structure engineering of gallium oxynitride powders with In doping is a facile procedure for obtaining visible-light sensitive photocatalysts with high activities.",
author = "Hu, {Che Chia} and Yuh-Lang Lee and Hsisheng Teng",
year = "2011",
month = "2",
day = "17",
doi = "10.1021/jp1105983",
language = "English",
volume = "115",
pages = "2805--2811",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Influence of indium doping on the activity of gallium oxynitride for water splitting under visible light irradiation

AU - Hu, Che Chia

AU - Lee, Yuh-Lang

AU - Teng, Hsisheng

PY - 2011/2/17

Y1 - 2011/2/17

N2 - Visible-light-active indium-doped gallium oxynitrides with a wurtzite-like structure were synthesized from nitridation of In(OH)3-containing Ga(OH)3 under NH3 flow at 625 °C and used for photocatalytic water splitting. This synthesis method yielded a homogeneous In distribution in gallium oxynitride solid solutions for Ga replacement levels of up to 1%. An appropriate amount of In substitution for Ga, approximately 0.5%, significantly enhanced the activity of gallium oxynitride in the visible-light-induced evolutions of H2 and O2 gases from methanol and AgNO3 solutions, respectively. X-ray photoelectron spectroscopic analysis indicated that In doping increased the dispersion of hybridized orbitals in the valence band of gallium oxynitride. This can enhance charge mobility in gallium oxynitride and thus photocatalytic activity. A higher degree of In doping resulted in nucleation of InN-like oxynitride on the gallium oxynitride surface and degraded the photocatalytic activity. This study demonstrates that band structure engineering of gallium oxynitride powders with In doping is a facile procedure for obtaining visible-light sensitive photocatalysts with high activities.

AB - Visible-light-active indium-doped gallium oxynitrides with a wurtzite-like structure were synthesized from nitridation of In(OH)3-containing Ga(OH)3 under NH3 flow at 625 °C and used for photocatalytic water splitting. This synthesis method yielded a homogeneous In distribution in gallium oxynitride solid solutions for Ga replacement levels of up to 1%. An appropriate amount of In substitution for Ga, approximately 0.5%, significantly enhanced the activity of gallium oxynitride in the visible-light-induced evolutions of H2 and O2 gases from methanol and AgNO3 solutions, respectively. X-ray photoelectron spectroscopic analysis indicated that In doping increased the dispersion of hybridized orbitals in the valence band of gallium oxynitride. This can enhance charge mobility in gallium oxynitride and thus photocatalytic activity. A higher degree of In doping resulted in nucleation of InN-like oxynitride on the gallium oxynitride surface and degraded the photocatalytic activity. This study demonstrates that band structure engineering of gallium oxynitride powders with In doping is a facile procedure for obtaining visible-light sensitive photocatalysts with high activities.

UR - http://www.scopus.com/inward/record.url?scp=79951535764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951535764&partnerID=8YFLogxK

U2 - 10.1021/jp1105983

DO - 10.1021/jp1105983

M3 - Article

VL - 115

SP - 2805

EP - 2811

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 6

ER -