TY - JOUR
T1 - Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1-xGex/Si(100) grown by gas-source molecular beam epitaxy
AU - D. U'Ren, Greg
AU - Goorsky, Mark S.
AU - Wang, Kang L.
N1 - Funding Information:
We would like to acknowledge the support of the National Science Foundation, grant DMR-9520893.
PY - 2000/4/3
Y1 - 2000/4/3
N2 - Selective epitaxy of Si1-xGex/Si(100) via gas-source molecular beam epitaxy was carried out to compare facet formations in Si1-xGex to Si. A single {311} facet with a pronounced cusp at the intersection with the (100) surface was observed in large windows (25 μm). However, facet formations occurring within smaller windows (≤5 μm) show the development of {311}- and {111}- type facets. For the 1-2 μm features, no cusps were observed, and facet growth was initiated at an earlier stage of development, avoiding contact with the SiO2 mask. While a 1400 angstroms Si epilayer is expected to have a {311}/{111} ratio of much less than one (approximately 0.15), for the 1-2 μm windows, however, it is approximately 2. The persistence of the {311}-type facet offers a faster reduction of the original (100) surface that facilitates the fabrication of a nanoscale template.
AB - Selective epitaxy of Si1-xGex/Si(100) via gas-source molecular beam epitaxy was carried out to compare facet formations in Si1-xGex to Si. A single {311} facet with a pronounced cusp at the intersection with the (100) surface was observed in large windows (25 μm). However, facet formations occurring within smaller windows (≤5 μm) show the development of {311}- and {111}- type facets. For the 1-2 μm features, no cusps were observed, and facet growth was initiated at an earlier stage of development, avoiding contact with the SiO2 mask. While a 1400 angstroms Si epilayer is expected to have a {311}/{111} ratio of much less than one (approximately 0.15), for the 1-2 μm windows, however, it is approximately 2. The persistence of the {311}-type facet offers a faster reduction of the original (100) surface that facilitates the fabrication of a nanoscale template.
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U2 - 10.1016/S0040-6090(99)01114-1
DO - 10.1016/S0040-6090(99)01114-1
M3 - Article
AN - SCOPUS:0033905054
SN - 0040-6090
VL - 365
SP - 147
EP - 150
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
ER -