Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors

Horng Long Cheng, Yu Shen Mai, Wei Yang Chou, Li Ren Chang

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The authors have fabricated the pentacene thin films on polymethylmethacrylate (PMMA) and on silicon dioxide dielectric surfaces featuring similar surface energy and surface roughness. On both surfaces the pentacene films displayed high crystal quality from x-ray diffraction scans, although the film on PMMA had significantly smaller grain size. The pentacene transistors with PMMA exhibited excellent electrical characteristics, including high mobility of above 1.1 cm2 V s, on/off ratio above 106, and sharp subthreshold slope below 1 Vdecade. The analysis of molecular microstructure of the pentacene films provided a reasonable explanation for the high performance using resonance micro-Raman spectroscopy.

Original languageEnglish
Article number171926
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
Publication statusPublished - 2007 May 21

Fingerprint

molecular structure
transistors
microstructure
thin films
surface energy
surface roughness
x ray diffraction
roughness
Raman spectroscopy
grain size
slopes
silicon dioxide
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors. / Cheng, Horng Long; Mai, Yu Shen; Chou, Wei Yang; Chang, Li Ren.

In: Applied Physics Letters, Vol. 90, No. 17, 171926, 21.05.2007.

Research output: Contribution to journalArticle

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