Influence of oxygen on diffusion in the Cu/Mo/Au system

S. Raud, Jen-Sue Chen, M. A. Nicolet

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The annealing behaviour of the Cu/Mo/Au metallization system is investigated. Backscattering spectrometry reveals a rapid diffusion of Cu and Au across the Mo film and the formation of AuCu after annealing at 600°C for 30 min in vacuum, but only when no impurity is detected in the as-deposited polycrystalline Mo layer. The Au-Cu interaction is impeded when 5.5 at% of oxygen is introduced in the as-deposited Mo layer. The thin film microstructures are analyzed using X-ray diffraction and transmission electron microscopy. The thermal stability difference between the samples with a pure Mo layer and a contaminated Mo layer is discussed in terms of fast diffusion process inhibited by a grain boundary decoration with oxygen atoms.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalApplied Physics A Solids and Surfaces
Volume52
Issue number2
DOIs
Publication statusPublished - 1991 Feb 1

Fingerprint

Annealing
Oxygen
oxygen
Backscattering
Metallizing
Spectrometry
Grain boundaries
Thermodynamic stability
Vacuum
Impurities
Transmission electron microscopy
X ray diffraction
Thin films
Atoms
Microstructure
annealing
oxygen atoms
backscattering
thermal stability
grain boundaries

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

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Influence of oxygen on diffusion in the Cu/Mo/Au system. / Raud, S.; Chen, Jen-Sue; Nicolet, M. A.

In: Applied Physics A Solids and Surfaces, Vol. 52, No. 2, 01.02.1991, p. 151-154.

Research output: Contribution to journalArticle

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