Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

Ming Hung Hsu; Sheng Po Chang; Shoou Jinn Chang; Wei Ting Wu; Jyun Yi Li

doi:10.1016/j.mssp.2017.10.031

Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

Ming Hung Hsu, Sheng Po Chang, Shoou Jinn Chang, Wei Ting Wu, Jyun Yi Li

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 10⁴, a UV-to-visible rejection ratio of over 10³, and a photoresponsivity of 0.17 A/W.

Original language	English
Pages (from-to)	297-302
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	74
DOIs	https://doi.org/10.1016/j.mssp.2017.10.031
Publication status	Published - 2018 Feb

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{36129b2569204a0eb275eb68c38dfb42,

title = "Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering",

abstract = "The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.",

author = "Hsu, {Ming Hung} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Wu, {Wei Ting} and Li, {Jyun Yi}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 103-2221-E-006-098 and MOST 105-2221-E-006-118 ]; the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. ",

year = "2018",

month = feb,

doi = "10.1016/j.mssp.2017.10.031",

language = "English",

volume = "74",

pages = "297--302",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

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T1 - Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

AU - Hsu, Ming Hung

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Wu, Wei Ting

AU - Li, Jyun Yi

N1 - Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 103-2221-E-006-098 and MOST 105-2221-E-006-118 ]; the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education.

PY - 2018/2

Y1 - 2018/2

N2 - The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

AB - The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

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