Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering

Ming Hung Hsu, Sheng Po Chang, Shoou Jinn Chang, Wei Ting Wu, Jyun Yi Li

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10 V and 290 nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17 A/W.

Original languageEnglish
Pages (from-to)297-302
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume74
DOIs
Publication statusPublished - 2018 Feb

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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