Influence of polymer gate dielectrics on n-type pentacene-based organic field-effect transistors

Tzung Fang Guo, Zen Jay Tsai, Shi Yu Chen, Ten Chin Wen, Chia Tin Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work addresses how the polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a double-layer gate dielectric, pentacene-based OFETs present an effective n-channel conduction, which carries a saturated, apparent pinch-off drain-source current with the promising electron mobility. The formation of n-channel in pentacene layer is supported by the increased capacitance at the quasi-static capacitance-voltage measurements for devices of the metal-insulator-semiconductor configuration biased at a positive gate voltage, in the n-type accumulation regime.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages453-455
Number of pages3
Publication statusPublished - 2007 Dec 1
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 2007 Jul 32007 Jul 6

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period07-07-0307-07-06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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    Guo, T. F., Tsai, Z. J., Chen, S. Y., Wen, T. C., & Chung, C. T. (2007). Influence of polymer gate dielectrics on n-type pentacene-based organic field-effect transistors. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 453-455). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).