Influence of pre-deposition treatments on the interfacial and electrical characteristics of ZrO₂ gate dielectrics

Engineering & Materials Science

• Annealing 17%
• Capacitance 15%
• Electric current measurement 20%
• Electric potential 9%
• Gate dielectrics 100%
• Leakage currents 18%
• Metals 22%
• Nanocrystallites 32%
• Oxides 30%
• Plasmas 32%
• Reactive sputtering 27%
• Rutherford backscattering spectroscopy 32%
• Silicon 27%
• Spectrometry 23%
• Transmission electron microscopy 18%
• Voltage measurement 22%
• X ray diffraction 17%
• X ray photoelectron spectroscopy 21%

Chemical Compounds

• Amorphous Material 12%
• Amount 7%
• Annealing 13%
• Dielectric Material 61%
• Dioxygen 8%
• Leakage Current 23%
• Liquid Film 33%
• Metal 15%
• Oxide 19%
• Plasma 21%
• Reactive Sputtering 26%
• Rutherford Backscattering Spectroscopy 22%
• Surface 5%
• Transmission Electron Microscopy 11%
• X-Ray Diffraction 8%
• X-Ray Photoelectron Spectroscopy 12%

Physics & Astronomy

• annealing 8%
• backscattering 12%
• capacitance 11%
• diffraction 7%
• electric potential 7%
• electrical measurement 13%
• grazing 16%
• leakage 11%
• matrices 7%
• metals 14%
• oxides 17%
• oxygen 8%
• photoelectron spectroscopy 11%
• silicon 15%
• sputtering 11%
• transmission electron microscopy 9%
• traps 21%
• x ray spectroscopy 14%
• x rays 6%