Influence of process flow on the characteristics of strained-Si nMOSFETs

K. T. Lam, S. L. Wu, S. J. Chang, Y. P. Wang, U. H. Liaw

Research output: Contribution to journalArticlepeer-review


We developed a process design that uses epitaxial growth of strained-Si layers after shallow trench isolation (STI) and well implantation to improve the drive current of n-type metal-oxide-semiconductor field effect transistors (nMOSFETs). Due to the significantly reduced thermal budget, we can minimize the degree of partial relaxation in strained-Si layers based on state-of-the-art MOSFET integration technique. Experimental results show that strained-Si devices fabricated by this flow exhibit enhanced saturated drive currents, up to 12% higher than that of strained-Si device with epitaxial growth of strained-Si layers before STI and well implantation.

Original languageEnglish
Pages (from-to)331-333
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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