Influence of RF bias on hydrogenated amorphous silicon by high-density plasma chemical vapor deposition

Wen Chu Hsiao, Chuan Pu Liu, Ying Lang Wang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We investigate the microstructure and thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films deposited by high-density plasma chemical vapor deposition (HDP-CVD) with various biases using radio frequency (rf) power. The a-Si:H films were prepared without external heating at a high rf power density of 3.18 W cm2, with the rf power bias varying from 0 to 200 W. Because sputtering also occurs during deposition, hydrogen may be present in a variety of bonding configurations in the a-Si:H films with various biases. Fourier transform infrared spectra show that the HDP-CVD a-Si:H films possess more hydrogen content as well as Si- H2 stretching modes than the conventional plasma-enhanced CVD counterpart. The surface morphology of the films becomes smooth upon ion bombardment under rf bias. In addition, variations of the film stress against temperature correlate to the hydrogen desorption at different stages during thermal annealing. More importantly, the different Si- Hx bonding configurations affect the crystallization behavior upon thermal annealing.

Original languageEnglish
Pages (from-to)G122-G126
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Influence of RF bias on hydrogenated amorphous silicon by high-density plasma chemical vapor deposition'. Together they form a unique fingerprint.

Cite this