Skip to main navigation
Skip to search
Skip to main content
National Cheng Kung University Home
English
中文
Home
Profiles
Research Units
Research output
Projects
Student theses
Equipment
Activities
Search by expertise, name or affiliation
Influence of Si content on the phase formation of W
1-x
Si
x
(0.30 ≤ x ≤ 0.74) gate electrodes and their work function
C. M. Lin,
Jen-Sue Chen
Department of Materials Science and Engineering
International Curriculum for Advanced Materials Program
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Influence of Si content on the phase formation of W
1-x
Si
x
(0.30 ≤ x ≤ 0.74) gate electrodes and their work function'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering & Materials Science
Silicides
100%
Electrodes
56%
Crystallinity
44%
Oxide semiconductors
43%
Tungsten
39%
Crystalline materials
38%
Atoms
37%
Annealing
36%
Capacitors
28%
Display devices
27%
Substrates
25%
Chemical analysis
23%
Metals
23%
Electric potential
18%
Hot Temperature
17%
Chemical Compounds
Work Function
84%
Body-Centered Cubic Crystal System
44%
Capacitor
37%
Behavior as Electrode
36%
Liquid Film
35%
Tungsten
33%
Annealing
28%
Crystallinity
27%
Voltage
26%
Physics & Astronomy
silicides
75%
electrodes
45%
metal oxide semiconductors
37%
crystallinity
32%
capacitors
31%
tungsten
31%
plots
29%
annealing
21%
electric potential
19%
atoms
18%