Abstract
A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.
Original language | English |
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Pages (from-to) | 446-450 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 38 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2002 May |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering