Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L. W. Wu; S. J. Chang; T. C. Wen; Y. K. Su; J. F. Chen; W. C. Lai; C. H. Kuo; C. H. Chen; J. K. Sheu

doi:10.1109/3.998615

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu

Research output: Contribution to journal › Article › peer-review

96 Citations (Scopus)

Abstract

A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.

Original language	English
Pages (from-to)	446-450
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/3.998615
Publication status	Published - 2002 May

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{ef7a0a911dd94ce48f3e0e27539768a3,

title = "Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes",

abstract = "A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.",

author = "Wu, {L. W.} and Chang, {S. J.} and Wen, {T. C.} and Su, {Y. K.} and Chen, {J. F.} and Lai, {W. C.} and Kuo, {C. H.} and Chen, {C. H.} and Sheu, {J. K.}",

note = "Funding Information: Manuscript received November 20, 2001. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.",

year = "2002",

month = may,

doi = "10.1109/3.998615",

language = "English",

volume = "38",

pages = "446--450",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

AU - Wu, L. W.

AU - Chang, S. J.

AU - Wen, T. C.

AU - Su, Y. K.

AU - Chen, J. F.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Chen, C. H.

AU - Sheu, J. K.

N1 - Funding Information: Manuscript received November 20, 2001. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.

PY - 2002/5

Y1 - 2002/5

N2 - A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.

AB - A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.

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