Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films

Chen-Kuei Chung, Y. L. Chang, T. S. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the resistivity and temperature coefficient of resistance (TCR) of nanostructured Ta-Si-N thin films fabricated on silicon substrate by reactively cosputtering have been studied. The substrate bias was controlled from 0 to 200 V at a fixed nitrogen flow ratio of 5 FN2% (FN 2/ (FN2+FAr) × 100%) to study the electrical properties of different Ta-Si-N films. The Ta-Si-N films with broad peaks reveal that there are a high content of amorphous material and nanocrystalline grains dispersed in an amorphous matrix which is called amorphouslike microstructure. Experimental results indicated that the electrical resistivity and TCR of Ta-Si-N increases with increasing bias. The resistivity and TCR of all amorphous-like Ta-Si-N at 5 FN2% is small about 264 to 277 μΩ-cm and -291 to -448 ppm/°C, respectively. The variation percentage of resistivity and TCR is about 9.84%- 21.66% and 1.37%- 10.18% after RTA annealing. In the application of Cu barrier layer, the sample at bias 0 V with the lowest resistivity and most stable TCR value can be the best candidate among four samples.

Original languageEnglish
Title of host publication4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Pages551-554
Number of pages4
DOIs
Publication statusPublished - 2009 Oct 12
Event4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China
Duration: 2009 Jan 52009 Jan 8

Publication series

Name4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Other

Other4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
CountryChina
CityShenzhen
Period09-01-0509-01-08

Fingerprint

Substrates
Temperature
Rapid thermal annealing
Electric properties
Annealing
Nitrogen
Thin films
Silicon
Microstructure

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chung, C-K., Chang, Y. L., & Chen, T. S. (2009). Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 (pp. 551-554). [5068640] (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009). https://doi.org/10.1109/NEMS.2009.5068640
Chung, Chen-Kuei ; Chang, Y. L. ; Chen, T. S. / Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films. 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. 2009. pp. 551-554 (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009).
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abstract = "In this paper, the resistivity and temperature coefficient of resistance (TCR) of nanostructured Ta-Si-N thin films fabricated on silicon substrate by reactively cosputtering have been studied. The substrate bias was controlled from 0 to 200 V at a fixed nitrogen flow ratio of 5 FN2{\%} (FN 2/ (FN2+FAr) × 100{\%}) to study the electrical properties of different Ta-Si-N films. The Ta-Si-N films with broad peaks reveal that there are a high content of amorphous material and nanocrystalline grains dispersed in an amorphous matrix which is called amorphouslike microstructure. Experimental results indicated that the electrical resistivity and TCR of Ta-Si-N increases with increasing bias. The resistivity and TCR of all amorphous-like Ta-Si-N at 5 FN2{\%} is small about 264 to 277 μΩ-cm and -291 to -448 ppm/°C, respectively. The variation percentage of resistivity and TCR is about 9.84{\%}- 21.66{\%} and 1.37{\%}- 10.18{\%} after RTA annealing. In the application of Cu barrier layer, the sample at bias 0 V with the lowest resistivity and most stable TCR value can be the best candidate among four samples.",
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Chung, C-K, Chang, YL & Chen, TS 2009, Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films. in 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009., 5068640, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009, pp. 551-554, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009, Shenzhen, China, 09-01-05. https://doi.org/10.1109/NEMS.2009.5068640

Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films. / Chung, Chen-Kuei; Chang, Y. L.; Chen, T. S.

4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. 2009. p. 551-554 5068640 (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this paper, the resistivity and temperature coefficient of resistance (TCR) of nanostructured Ta-Si-N thin films fabricated on silicon substrate by reactively cosputtering have been studied. The substrate bias was controlled from 0 to 200 V at a fixed nitrogen flow ratio of 5 FN2% (FN 2/ (FN2+FAr) × 100%) to study the electrical properties of different Ta-Si-N films. The Ta-Si-N films with broad peaks reveal that there are a high content of amorphous material and nanocrystalline grains dispersed in an amorphous matrix which is called amorphouslike microstructure. Experimental results indicated that the electrical resistivity and TCR of Ta-Si-N increases with increasing bias. The resistivity and TCR of all amorphous-like Ta-Si-N at 5 FN2% is small about 264 to 277 μΩ-cm and -291 to -448 ppm/°C, respectively. The variation percentage of resistivity and TCR is about 9.84%- 21.66% and 1.37%- 10.18% after RTA annealing. In the application of Cu barrier layer, the sample at bias 0 V with the lowest resistivity and most stable TCR value can be the best candidate among four samples.

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Chung C-K, Chang YL, Chen TS. Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. 2009. p. 551-554. 5068640. (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009). https://doi.org/10.1109/NEMS.2009.5068640