Influence of substrate bias on the resistivity and TCR of nanostructured Ta-Si-N films

Chen-Kuei Chung, Y. L. Chang, T. S. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the resistivity and temperature coefficient of resistance (TCR) of nanostructured Ta-Si-N thin films fabricated on silicon substrate by reactively cosputtering have been studied. The substrate bias was controlled from 0 to 200 V at a fixed nitrogen flow ratio of 5 FN2% (FN 2/ (FN2+FAr) × 100%) to study the electrical properties of different Ta-Si-N films. The Ta-Si-N films with broad peaks reveal that there are a high content of amorphous material and nanocrystalline grains dispersed in an amorphous matrix which is called amorphouslike microstructure. Experimental results indicated that the electrical resistivity and TCR of Ta-Si-N increases with increasing bias. The resistivity and TCR of all amorphous-like Ta-Si-N at 5 FN2% is small about 264 to 277 μΩ-cm and -291 to -448 ppm/°C, respectively. The variation percentage of resistivity and TCR is about 9.84%- 21.66% and 1.37%- 10.18% after RTA annealing. In the application of Cu barrier layer, the sample at bias 0 V with the lowest resistivity and most stable TCR value can be the best candidate among four samples.

Original languageEnglish
Title of host publication4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Pages551-554
Number of pages4
DOIs
Publication statusPublished - 2009 Oct 12
Event4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China
Duration: 2009 Jan 52009 Jan 8

Publication series

Name4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Other

Other4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
CountryChina
CityShenzhen
Period09-01-0509-01-08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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