Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba [Mg 1/3(Nb x/4Ta (4-x)/4) 2/3]O 3 ceramics

Chen Fu Lin; Horng Hwa Lu; Tien I. Chang; Jow Lay Huang

doi:10.1063/1.2041831

Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba [Mg _1/3(Nb _x/4Ta _(4-x)/4) _2/3]O ₃ ceramics

Chen Fu Lin, Horng Hwa Lu, Tien I. Chang, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics (x=0, 1, 2, 3, and 4) synthesized by a solid reaction method were sintered at 1650 °C for 9 h. The quality factor (Q,∼1tan δ,tan δ: dielectric loss) and superlattice structure were investigated by the cavity method and high-resolution electron microscopy. The excellent Q value of 17 600 obtained at appropriate Nb content (x=1). The disorder structure (superlattice modulation∼0.41 nm), 1:2 ordering structure (superlattice modulation∼0.71 nm) and antiphase domain boundary (APB) were revealed in Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics. The formation of extra ordering structure (superlattice modulation∼1.24 nm) on the APBs contributed to the improved Q value with the stabilization of ordering-induced domain boundaries.

Original language	English
Article number	102905
Journal	Applied Physics Letters
Volume	87
Issue number	10
DOIs	https://doi.org/10.1063/1.2041831
Publication status	Published - 2005 Sep 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba [Mg 1/3(Nb x/4Ta (4-x)/4) 2/3]O 3 ceramics",

abstract = "The Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics (x=0, 1, 2, 3, and 4) synthesized by a solid reaction method were sintered at 1650 °C for 9 h. The quality factor (Q,∼1tan δ,tan δ: dielectric loss) and superlattice structure were investigated by the cavity method and high-resolution electron microscopy. The excellent Q value of 17 600 obtained at appropriate Nb content (x=1). The disorder structure (superlattice modulation∼0.41 nm), 1:2 ordering structure (superlattice modulation∼0.71 nm) and antiphase domain boundary (APB) were revealed in Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics. The formation of extra ordering structure (superlattice modulation∼1.24 nm) on the APBs contributed to the improved Q value with the stabilization of ordering-induced domain boundaries.",

author = "Lin, {Chen Fu} and Lu, {Horng Hwa} and Chang, {Tien I.} and Huang, {Jow Lay}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China for its financial support under the Contract No. NSC-92-2216-E-006-011.",

year = "2005",

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doi = "10.1063/1.2041831",

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T1 - Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba [Mg 1/3(Nb x/4Ta (4-x)/4) 2/3]O 3 ceramics

AU - Lin, Chen Fu

AU - Lu, Horng Hwa

AU - Chang, Tien I.

AU - Huang, Jow Lay

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China for its financial support under the Contract No. NSC-92-2216-E-006-011.

PY - 2005/9/5

Y1 - 2005/9/5

N2 - The Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics (x=0, 1, 2, 3, and 4) synthesized by a solid reaction method were sintered at 1650 °C for 9 h. The quality factor (Q,∼1tan δ,tan δ: dielectric loss) and superlattice structure were investigated by the cavity method and high-resolution electron microscopy. The excellent Q value of 17 600 obtained at appropriate Nb content (x=1). The disorder structure (superlattice modulation∼0.41 nm), 1:2 ordering structure (superlattice modulation∼0.71 nm) and antiphase domain boundary (APB) were revealed in Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics. The formation of extra ordering structure (superlattice modulation∼1.24 nm) on the APBs contributed to the improved Q value with the stabilization of ordering-induced domain boundaries.

AB - The Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics (x=0, 1, 2, 3, and 4) synthesized by a solid reaction method were sintered at 1650 °C for 9 h. The quality factor (Q,∼1tan δ,tan δ: dielectric loss) and superlattice structure were investigated by the cavity method and high-resolution electron microscopy. The excellent Q value of 17 600 obtained at appropriate Nb content (x=1). The disorder structure (superlattice modulation∼0.41 nm), 1:2 ordering structure (superlattice modulation∼0.71 nm) and antiphase domain boundary (APB) were revealed in Ba [Mg13 (Nbx4 Ta (4-x) 4) 23] O3 ceramics. The formation of extra ordering structure (superlattice modulation∼1.24 nm) on the APBs contributed to the improved Q value with the stabilization of ordering-induced domain boundaries.

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Influence of superlattice and antiphase domain boundaries on dielectric loss in Ba [Mg _1/3(Nb _x/4Ta _(4-x)/4) _2/3]O ₃ ceramics

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