TY - GEN
T1 - Influence of surface cleaning on stressvoiding and electromigration of Cu damascene interconnection
AU - Wang, Jen Pan
AU - Su, Yan Kuin
AU - Chen, Jone F.
PY - 2007
Y1 - 2007
N2 - This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.
AB - This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.
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U2 - 10.1109/RELPHY.2007.369993
DO - 10.1109/RELPHY.2007.369993
M3 - Conference contribution
AN - SCOPUS:34548811426
SN - 1424409195
SN - 9781424409198
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 646
EP - 647
BT - 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
T2 - 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Y2 - 15 April 2007 through 19 April 2007
ER -